股市资金流向图：今日沪深两市主力资金净流入446.79亿元，占比1.69%；大单资金净流入22.40亿元，占比0.08%；小单资金净流出82.93亿元，占比0.31%。

Researchers at the Institute of Metal Research, Chinese Academy of Sciences, led by Sun Dongming and Liu Chi with multiple collaborators, reported the first silicon–graphene–germanium barrier transistor to undergo RF testing. Published in Nature Communications on June 6, the device set a record for cutoff frequency among vertical 2D-base transistors, with an intrinsic cutoff frequency (fT) of 132 GHz in RF measurements and a world‑high transistor current gain. Device modelling and simulation indicate that, with optimized doping, lower contact resistance and reduced parasitics, the theoretical operating frequency could exceed 1 THz and reach the terahertz band.

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