China Electronics Technology Group (CETC) No.55 Research Institute said its
domestically developed, world’s first mass-produced silicon-based gallium
nitride (Si‑GaN) RF chip for smart terminals has recently delivered over 5 mln
units. The Si‑GaN series combines high power, high efficiency, ultra-wideband
and high reliability and is designed to meet the high-efficiency, high-linearity
requirements of RF power amplifier chips for space‑air‑ground integrated
communications. CETC said the product overcomes industrialisation constraints
for high-end RF chips and will support full-coverage, high-speed integrated
information networks.
