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富士通:已开始与发那科、安川电机及川崎重工探索物理AI领域的机遇。
2026-07-16
富士通:已开始与发那科、安川电机及川崎重工探索物理AI领域的机遇。
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2026-07-16
Data published July 15 by FnGuide Quantwise and Mirae Asset Securities show four single-stock leveraged ETFs issued by Mirae Asset Global Investments and Samsung Asset Management—tracking Samsung Electronics and SK Hynix—suffered a cumulative mark-to-market loss of KRW8.8337 tln from July 1–13. AUM for those four ETFs fell from KRW14.3518 tln to KRW8.9389 tln, a 37.7% decline. Across all 14 KRX-listed single-stock leveraged ETFs tracking Samsung Electronics and SK Hynix, assets under management
Data published July 15 by FnGuide Quantwise and Mirae Asset Securities show four single-stock leveraged ETFs issued by Mirae Asset Global Investments and Samsung Asset Management—tracking Samsung Electronics and SK Hynix—suffered a cumulative mark-to-market loss of KRW8.8337 tln from July 1–13. AUM for those four ETFs fell from KRW14.3518 tln to KRW8.9389 tln, a 37.7% decline. Across all 14 KRX-listed single-stock leveraged ETFs tracking Samsung Electronics and SK Hynix, assets under management dropped 41.4%—from KRW15.9349 tln at end-June to KRW9.3386 tln on July 13—with Samsung-linked leveraged ETF AUM down 35.3% and SK Hynix-linked leveraged ETF AUM down 44.9%. Korea Capital Market Institute data show individual investors had net bought KRW8.2 tln of single-stock leveraged ETFs as of June 19, about 60% of the related AUM, indicating a substantial portion of recent losses may be borne by retail holders.
2026-07-16
Citrini Research forecasts a 28.7 EB global DRAM shortfall by 2030 — about 18% of 2030 demand and versus current global capacity of roughly 40 EB. Researcher Zephyr estimates 2030 DRAM demand (including HBM) at 157.5 EB versus supply of about 128.8 EB; standard DRAM is the principal bottleneck with supply ~91 EB versus demand ~120 EB, widening the gap to about 25%. Citrini says capacity additions from Samsung, SK Hynix, Micron and Chinese fabs are likely to be quickly absorbed by surging AI-driv
Citrini Research forecasts a 28.7 EB global DRAM shortfall by 2030 — about 18% of 2030 demand and versus current global capacity of roughly 40 EB. Researcher Zephyr estimates 2030 DRAM demand (including HBM) at 157.5 EB versus supply of about 128.8 EB; standard DRAM is the principal bottleneck with supply ~91 EB versus demand ~120 EB, widening the gap to about 25%. Citrini says capacity additions from Samsung, SK Hynix, Micron and Chinese fabs are likely to be quickly absorbed by surging AI-driven demand — large-model training/inference and HBM-based accelerators — which also boosts server DRAM requirements. Under this tight balance, DRAM ASPs could remain elevated at roughly $1.5–2 per Gb, keeping memory costs pressured for servers, PCs and consumer electronics.
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