Samsung’s semiconductor technology head said next‑generation HBM5 will use a 2nm
GAA process for the base die with higher-density through‑silicon vias (TSVs) and
is expected to be more than 50% faster than HBM4E. Samsung said it will leverage
experience from 4nm HBM4 base dies, introduce 2nm early in HBM5 development, and
expand customer engagement across mobile, AI, HPC, automotive electronics and
robotics.
