科威特外交部：我们谴责伊朗对我国一再实施的袭击，其中最近一次发生在今天凌晨。伊朗的袭击行为反映出一种威胁地区安全的敌对做法，我们保留针对任何威胁采取行动的权利。伊朗一再发动袭击是对我国安全与稳定的直接威胁。

Researchers at the Swiss Federal Institute of Technology Lausanne (EPFL) have developed a gallium nitride (GaN) power transistor with a breakdown voltage near 4,000V while retaining low on-resistance. Published in Nature Electronics, the device delivers about five times the breakdown voltage of commercial GaN power parts (typically 600–650V) and is positioned for high‑voltage power conversion in AI data centers, renewable-energy systems and electric vehicles, reducing conversion losses and heat.

泰国央行行长：货币政策已完全宽松。