IEA月报：欧佩克+产量在8月份下降了180万桶/日。

Researchers at the Chinese Academy of Sciences Institute of Semiconductors report an angstrom-scale (0.1 nm) atomic-layer sliding that produces a 10 million-fold (10^7x) resistance change. Using 2D van der Waals heterojunction interface engineering, the team says it has overcome the customary trade-off between high switching ratio and durability in sliding ferroelectric tunneling junctions. They state that, if scaled into large device arrays with supporting circuitry, the devices could enable faster, lower-power data storage and computation for mobile and PC terminals and help advance in-memory computing architectures. Results published Sept. 11 in Science.

恐慌指数VIX下跌1.49点，报16.33点。