Korean tech outlet THEELEC reports SK Hynix has completed production
verification of its next‑generation V10 375‑layer 3D NAND and is converting
production lines. The company aims for large‑scale mass production in 2026 via
upgrades to existing fabs as it seeks to challenge Samsung Electronics' lead in
ultra‑high stacking. The V10 design replaces some wordlines' traditional
tungsten with molybdenum in the metal interconnect layers; molybdenum is
expected to become a key material as 3D NAND advances beyond 600 layers.