Beijing time 28th 20:00 — executive office hours; 21:30 — meeting with the Ukrainian president; 23:00 — meeting with the Israeli prime minister; Beijing time 29th 02:00 — attend Senator Lindsey Graham's funeral; 06:30 — participate in a phone fundraising rally.

Putin says inflation risks are rising.

Samsung’s semiconductor technology head said next‑generation HBM5 will use a 2nm GAA process for the base die with higher-density through‑silicon vias (TSVs) and is expected to be more than 50% faster than HBM4E. Samsung said it will leverage experience from 4nm HBM4 base dies, introduce 2nm early in HBM5 development, and expand customer engagement across mobile, AI, HPC, automotive electronics and robotics.