Researchers at the Swiss Federal Institute of Technology Lausanne (EPFL) have
developed a gallium nitride (GaN) power transistor with a breakdown voltage near
4,000V while retaining low on-resistance. Published in Nature Electronics, the
device delivers about five times the breakdown voltage of commercial GaN power
parts (typically 600–650V) and is positioned for high‑voltage power conversion
in AI data centers, renewable-energy systems and electric vehicles, reducing
conversion losses and heat.
