Samsung Electronics will partner with ASML to co-develop High-NA extreme ultraviolet (EUV) lithography mask blanks, Seoul Economic Daily reports. The collaboration targets an industry shift from 6‑inch to 12‑inch mask blanks used since the 1980s; Samsung aims to be first to establish DRAM mass production on High‑NA EUV and plans to deploy the technology in DRAM from 2028. Samsung also intends to extend High‑NA EUV to 1.4nm advanced logic to support foundry expansion. High‑NA EUV offers a numeric

Samsung Electronics will partner with ASML to co-develop High-NA extreme ultraviolet (EUV) lithography mask blanks, Seoul Economic Daily reports. The collaboration targets an industry shift from 6‑inch to 12‑inch mask blanks used since the 1980s; Samsung aims to be first to establish DRAM mass production on High‑NA EUV and plans to deploy the technology in DRAM from 2028. Samsung also intends to extend High‑NA EUV to 1.4nm advanced logic to support foundry expansion. High‑NA EUV offers a numerical aperture roughly 66% higher than conventional EUV, enabling finer circuit patterning; replacing 6‑inch masks with 12‑inch blanks is intended to raise fab throughput and reduce chip manufacturing costs.