Researchers at the Chinese Academy of Sciences Institute of Semiconductors report an angstrom-scale (0.1 nm) atomic-layer sliding that produces a 10 million-fold (10^7x) resistance change. Using 2D van der Waals heterojunction interface engineering, the team says it has overcome the customary trade-off between high switching ratio and durability in sliding ferroelectric tunneling junctions. They state that, if scaled into large device arrays with supporting circuitry, the devices could enable fa

Researchers at the Chinese Academy of Sciences Institute of Semiconductors report an angstrom-scale (0.1 nm) atomic-layer sliding that produces a 10 million-fold (10^7x) resistance change. Using 2D van der Waals heterojunction interface engineering, the team says it has overcome the customary trade-off between high switching ratio and durability in sliding ferroelectric tunneling junctions. They state that, if scaled into large device arrays with supporting circuitry, the devices could enable faster, lower-power data storage and computation for mobile and PC terminals and help advance in-memory computing architectures. Results published Sept. 11 in Science.