China Electronics Technology Group (CETC) No.55 Research Institute said its domestically developed, world’s first mass-produced silicon-based gallium nitride (Si‑GaN) RF chip for smart terminals has recently delivered over 5 mln units. The Si‑GaN ser

2026-06-05

China Electronics Technology Group (CETC) No.55 Research Institute said its domestically developed, world’s first mass-produced silicon-based gallium nitride (Si‑GaN) RF chip for smart terminals has recently delivered over 5 mln units. The Si‑GaN series combines high power, high efficiency, ultra-wideband and high reliability and is designed to meet the high-efficiency, high-linearity requirements of RF power amplifier chips for space‑air‑ground integrated communications. CETC said the product overcomes industrialisation constraints for high-end RF chips and will support full-coverage, high-speed integrated information networks.