Samsung Electronics showcased at VLSI 2026 in the US a 3D-stacked field-effect transistor with a 42nm gate pitch, the industry's smallest. The vertical stacking approach—stacking transistors rather than placing them planar—is intended for use in syst

2026-06-17

Samsung Electronics showcased at VLSI 2026 in the US a 3D-stacked field-effect transistor with a 42nm gate pitch, the industry's smallest. The vertical stacking approach—stacking transistors rather than placing them planar—is intended for use in system semiconductors.