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Samsung’s semiconductor technology head said next‑generation HBM5 will use a 2nm GAA process for the base die with higher-density through‑silicon vias (TSVs) and is expected to be more than 50% faster than HBM4E. Samsung said it will leverage experie

2026-07-27

Samsung’s semiconductor technology head said next‑generation HBM5 will use a 2nm GAA process for the base die with higher-density through‑silicon vias (TSVs) and is expected to be more than 50% faster than HBM4E. Samsung said it will leverage experience from 4nm HBM4 base dies, introduce 2nm early in HBM5 development, and expand customer engagement across mobile, AI, HPC, automotive electronics and robotics.

Other News
2026-07-27

Japan leading index, May final MoM +0.4% (prior +0.7%).

Japan leading index, May final MoM +0.4% (prior +0.7%).
2026-07-27

European travel and leisure stocks led sector gains, rising 2.5%; oil and gas was the biggest laggard, down 2.3%.

European travel and leisure stocks led sector gains, rising 2.5%; oil and gas was the biggest laggard, down 2.3%.
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