Fujia Gallium said it used its proprietary vertical Bridgman (VB) method to grow 6‑inch Ga2O3 single‑crystal boules exceeding 70mm in thickness. Pinghu lab HRXRD reported excellent crystallinity and the China Institute of Metrology confirmed electric

2026-08-23

Fujia Gallium said it used its proprietary vertical Bridgman (VB) method to grow 6‑inch Ga2O3 single‑crystal boules exceeding 70mm in thickness. Pinghu lab HRXRD reported excellent crystallinity and the China Institute of Metrology confirmed electrical properties meet SiC industry substrate requirements. Boule thickness is a key indicator of growth maturity and industrialisation; thicker boules allow more substrates per crystal, directly lowering per‑wafer cost.

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