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UK foreign secretary announced 1 new designation under the anti-terrorism sanctions regime and 5 new designations under the global human rights sanctions regime.

2026-09-08

UK foreign secretary announced 1 new designation under the anti-terrorism sanctions regime and 5 new designations under the global human rights sanctions regime.

Other News
2026-09-08

The three major A-share indices fell again in the afternoon and all turned negative, with sectors such as lithography machines, liquid-cooled servers, semiconductors, and CPO concepts leading the decline.

The three major A-share indices fell again in the afternoon and all turned negative, with sectors such as lithography machines, liquid-cooled servers, semiconductors, and CPO concepts leading the decline.
2026-09-08

Samsung Electronics announced on August 8th that it will expand its collaboration with Dutch semiconductor equipment manufacturer ASML, planning to introduce High NA EUV technology into advanced DRAM manufacturing by 2028. This will be the first time

Samsung Electronics announced on August 8th that it will expand its collaboration with Dutch semiconductor equipment manufacturer ASML, planning to introduce High NA EUV technology into advanced DRAM manufacturing by 2028. This will be the first time Samsung Electronics has used High NA EUV technology in actual mass production of DRAM. High NA EUV is a next-generation exposure technology with a higher numerical aperture (NA) than existing EUV equipment, enabling finer circuit patterns. Existing EUV equipment has an NA of 0.33, while High NA EUV increases the NA to 0.55. Due to its higher resolution, High NA EUV can reduce some steps in existing EUV processes that require multiple exposures, thus offering advantages in chip miniaturization and simplified manufacturing processes. Samsung Electronics plans to apply High NA EUV in advanced DRAM mass production products and verify related process conditions, yield, and production efficiency. Through this process, the company aims to master the key process technologies required for further DRAM miniaturization and accelerate the application of High NA EUV in mass production.
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