[Samsung Adjusts Next-Generation DRAM Roadmap, Accelerates Hybrid Bonding Technology] According to ZDNet Korea on the 23rd, Samsung Electronics has incorporated its previously independently developed B1b technology into its official roadmap and changed the definition of the next-generation "D0a" from Vertical Channel Transistor (VCT) DRAM to B1b, while VCT has been renamed "D0a-V" and will continue to be developed in parallel. D0a will be Samsung's first sub-10nm DRAM. The currently mass-produced 1c is the sixth-generation 10nm DRAM, and the next-generation 1d is expected to be the last 10nm product (the relevant nanometer numbers are market names for technology generations, not actual physical dimensions). B1b manufactures the memory cells and peripheral circuits on different wafers, and then connects them through wafer-to-wafer (W2W) hybrid bonding, which can improve integration density and allow the two parts to use optimized processes respectively. Since W2W hybrid bonding has been mass-produced in CMOS image sensors and high-level NAND flash memory, the commercialization threshold of B1b is lower than that of VCT, so Samsung is prioritizing its development. The company is also evaluating the use of B1b in HBM5, which is expected to enter mass production around 2029; D0a DRAM based on B1b is at least two years away from commercialization. Industry insiders believe that VCT DRAM and 3D DRAM may also be further developed based on B1b in the future.
