Researchers at the Institute of Metal Research, Chinese Academy of Sciences, led by Sun Dongming and Liu Chi with multiple collaborators, reported the first silicon–graphene–germanium barrier transistor to undergo RF testing. Published in Nature Communications on June 6, the device set a record for cutoff frequency among vertical 2D-base transistors, with an intrinsic cutoff frequency (fT) of 132 GHz in RF measurements and a world‑high transistor current gain. Device modelling and simulation ind

Researchers at the Institute of Metal Research, Chinese Academy of Sciences, led by Sun Dongming and Liu Chi with multiple collaborators, reported the first silicon–graphene–germanium barrier transistor to undergo RF testing. Published in Nature Communications on June 6, the device set a record for cutoff frequency among vertical 2D-base transistors, with an intrinsic cutoff frequency (fT) of 132 GHz in RF measurements and a world‑high transistor current gain. Device modelling and simulation indicate that, with optimized doping, lower contact resistance and reduced parasitics, the theoretical operating frequency could exceed 1 THz and reach the terahertz band.