Researchers at the Institute of Metal Research, Chinese Academy of Sciences, led
by Sun Dongming and Liu Chi with multiple collaborators, reported the first
silicon–graphene–germanium barrier transistor to undergo RF testing. Published
in Nature Communications on June 6, the device set a record for cutoff frequency
among vertical 2D-base transistors, with an intrinsic cutoff frequency (fT) of
132 GHz in RF measurements and a world‑high transistor current gain. Device
modeling and simulation indicate that, with optimized doping, lower contact
resistance and reduced parasitics, the theoretical operating frequency could
exceed 1 THz and reach the terahertz band.
