Samsung Electronics said it will expand cooperation with Dutch equipment maker ASML to introduce High NA EUV lithography into advanced DRAM production by 2028, its first use of High NA in DRAM mass production. High NA EUV raises numerical aperture from 0.33 to 0.55, improving resolution and reducing multi‑exposure steps versus current EUV, which can simplify process flow and enable further scaling. Samsung will validate process conditions, yields and productivity on advanced DRAM products to sec

Samsung Electronics said it will expand cooperation with Dutch equipment maker ASML to introduce High NA EUV lithography into advanced DRAM production by 2028, its first use of High NA in DRAM mass production. High NA EUV raises numerical aperture from 0.33 to 0.55, improving resolution and reducing multi‑exposure steps versus current EUV, which can simplify process flow and enable further scaling. Samsung will validate process conditions, yields and productivity on advanced DRAM products to secure key scaling technology and accelerate High NA EUV adoption in volume manufacturing.