Samsung Electronics said it will expand cooperation with Dutch equipment maker
ASML to introduce High NA EUV lithography into advanced DRAM production by 2028,
its first use of High NA in DRAM mass production. High NA EUV raises numerical
aperture from 0.33 to 0.55, improving resolution and reducing multi-exposure
steps versus current EUV, which can simplify process flow and enable further
scaling. Samsung will validate process conditions, yields and productivity on
advanced DRAM products to secure key scaling technology and accelerate High NA
EUV adoption in volume manufacturing.