巴基斯坦国防部长：任何对联合防御协议签署国的侵略将引发沙特、土耳其和巴基斯坦的集体回应。

SEFE said it remains feasible to bring Germany's overall gas storage to sufficient levels before the start of the 2026 winter heating season.

Samsung Electronics said it will expand cooperation with Dutch equipment maker ASML to introduce High NA EUV lithography into advanced DRAM production by 2028, its first use of High NA in DRAM mass production. High NA EUV raises numerical aperture from 0.33 to 0.55, improving resolution and reducing multi‑exposure steps versus current EUV, which can simplify process flow and enable further scaling. Samsung will validate process conditions, yields and productivity on advanced DRAM products to secure key scaling technology and accelerate High NA EUV adoption in volume manufacturing.