A Fudan University team at the National Key Laboratory for Integrated Circuits and Systems and the School of Integrated Circuit and Micro‑Nano Electronics published in Science a device called QuantumFlash that uses a coplanar drain–channel–source “unified” structure to demonstrate clear single‑electron nonvolatile storage behavior at room temperature (27°C) for the first time. The team says the result overturns the conventional view that single‑electron storage is infeasible and establishes a ne

A Fudan University team at the National Key Laboratory for Integrated Circuits and Systems and the School of Integrated Circuit and Micro‑Nano Electronics published in Science a device called QuantumFlash that uses a coplanar drain–channel–source “unified” structure to demonstrate clear single‑electron nonvolatile storage behavior at room temperature (27°C) for the first time. The team says the result overturns the conventional view that single‑electron storage is infeasible and establishes a new theoretical framework for single‑electron quantum storage that could underpin future AI‑era compute. Researchers report an end‑to‑end technology chain from materials and device innovation to high‑end chip integration and applications and plan to accelerate industrialization: they aim to form a company, engage leading AI customers, recruit strategic partners and seek social and government support to commercialize products within 1–3 years.