A Fudan University team at the National Key Laboratory for Integrated Circuits
and Systems and the School of Integrated Circuit and Micro‑Nano Electronics
published in Science a device called QuantumFlash that uses a coplanar
drain–channel–source “unified” structure to demonstrate clear single‑electron
nonvolatile storage behavior at room temperature (27°C) for the first time. The
team says the result overturns the conventional view that single‑electron
storage is infeasible and establishes a new theoretical framework for
single‑electron quantum storage that could underpin future AI‑era compute.
Researchers report an end‑to‑end technology chain from materials and device
innovation to high‑end chip integration and applications and plan to accelerate
industrialization: they aim to form a company, engage leading AI customers,
recruit strategic partners and seek social and government support to
commercialize products within 1–3 years.
