Researchers at the Chinese Academy of Sciences Institute of Semiconductors
report an angstrom-scale (0.1 nm) atomic-layer sliding that produces a 10
million-fold (10^7x) resistance change. Using 2D van der Waals heterojunction
interface engineering, the team says it has overcome the customary trade-off
between high switching ratio and durability in sliding ferroelectric tunneling
junctions. They state that, if scaled into large device arrays with supporting
circuitry, the devices could enable faster, lower-power data storage and
computation for mobile and PC terminals and help advance in-memory computing
architectures. Results published Sept. 11 in Science.
